3DD13009

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switch mode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 24 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 6 A 130 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A VCE(sat)-3 Collector-Emitter Saturation Voltage...