3DF1E

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DF1E DESCRIPTION ·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A PD Total Power Dissipation@TC=75℃ 10 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 10 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DF1E ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 1mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 0.5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.75A; IB= 0.075A ICEO Collector Cutoff Current VCE= 100V; IB= 0 hFE DC Current Gain IC= 0.75A; VCE= 10V MIN MAX UNIT 350 V 250 V 6 V 0.8 V 0.2 mA 15 NOTICE： ISC reserves the rights to m...