INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification 3DK104E
DESCRIPTION ·With TO-3 packa...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification 3DK104E
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
0.5
A
PD
Total Power Dissipation@TC=75℃
10
W
TJ
Max.Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 10
UNIT ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification 3DK104E
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCBO Collector-Base Sustaining Voltage
IC= 2mA; IE= 0
BVCEO Collector-Emitter Sustaining Voltage IC= 2mA; IB= 0
BVEBO Emitter-Base Sustaining Voltage
IE= 4mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.75A; IB= 0.075A
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.75A; IB= 0.075A
ICEO
Collector Cutoff Current
VCE= 20V; IB= 0
hFE
DC Current Gain
IC= 0.75A; VCE...