AD161

isc Silicon NPN Power Transistor AD161 DESCRIPTION ·Wide Area of Safe Operation ·DC Current Gain- : hFE=50-350@IC= 0.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power switch and amplifier, consumer and industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3 A 4 W 90 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.52 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICEO Collector Cutoff Current VCE= 50V; IB= 0 ICBO Collector Cutoff Current VCB= 32V; IE= 0 IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 hFE DC Current Gain I...