BC337

isc Silicon NPN Transistor DESCRIPTION ·Low Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF-Driver stages and low power output stages. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range BC337 VALUE UNIT 50 V 45 V 5 V 800 mA 625 mW 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC=100μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 100μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=500mA ; IB= 50mA VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IC= 300mA ; VCE= 1V VCB= 45V; IE= 0 ICEO Collector Cutoff Current VCE= 40V; IB= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC=100mA ; VCE= 1V fT Current-Gain—Bandwidth Product  hFE Classifications 16 25 40 IC= 10mA; VCE= 5V; f= 100MHz 100-250 160-400 250-630 BC337 MIN TYP. MAX UNIT 50 V 45 V 5 V 0.7 V 1.2 V 0.1 μA 0.2 μA 0.1 μA 100 630 210 MHz NOTICE： ISC reserves the rights to ...