BD239A

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD239; 60V(Min)- BD239A 80V(Min)- BD239B; 100V(Min)- BD239C ·Complement to Type BD240/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD239 55 BD239A 70 VCER Collector-Emitter Voltage V BD239B 90 BD239C 115 BD239 45 BD239A 60 VCEO Collector-Emitter Voltage V BD239B 80 BD239C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.6 A 30 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BD239/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 4.17 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD239 VCEO(SUS) Collector-Emitter Sustaining Voltage BD239A BD239B IC= 30mA; IB= 0 BD239C VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 4V BD239 VCE= 45V; VBE= 0 ICES Collector Cutoff Current BD239A VCE= 6...