isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.2A ·Collector-Emitter Sustaining Vo...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.2A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BD239; 60V(Min)- BD239A 80V(Min)- BD239B; 100V(Min)- BD239C
·Complement to Type BD240/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD239
55
BD239A
70
VCER
Collector-Emitter Voltage
V
BD239B
90
BD239C
115
BD239
45
BD239A
60
VCEO
Collector-Emitter Voltage
V
BD239B
80
BD239C
100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
4
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.6
A
30
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
BD239/A/B/C
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 4.17 ℃/W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD239
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD239A BD239B
IC= 30mA; IB= 0
BD239C
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 4V
BD239
VCE= 45V; VBE= 0
ICES
Collector Cutoff Current
BD239A
VCE= 6...