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BD242 Dataheets PDF



Part Number BD242
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet BD242 DatasheetBD242 Datasheet (PDF)

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD242/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C ·Complement to Type BD241/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO.

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isc Silicon PNP Power Transistor INCHANGE Semiconductor BD242/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C ·Complement to Type BD241/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD242 -55 BD242A -70 VCBO Collector-Base Voltage V BD242B -90 BD242C -115 BD242 -45 BD242A -60 VCEO Collector-Emitter Voltage V BD242B -80 BD242C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3.0 A ICM Collector Current-Peak -5.0 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.0 A 40 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case isc website:www.iscsemi.com 3.125 ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BD242/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD242 VCEO(SUS) Collector-Emitter Sustaining Voltage BD242A BD242B IC= -30mA ;IB= 0 BD242C VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.6A VBE(on) Base-Emitter On Voltage BD242 IC= -3A ; VCE= -4V VCE= -45V; VBE= 0 ICES Collector Cutoff Current BD242A BD242B VCE= -60V; VBE= 0 VCE= -80V; VBE= 0 BD242C VCE= -100V; VBE= 0 ICEO Collector Cutoff Current BD242/A VCE= -30V;IB= 0 BD242B/C VCE= -60V;IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A ; VCE= -4V hFE-2 DC Current Gain IC= -3A ; VCE= -4V fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V, ftest= 1.0MHz MIN MAX UNIT -45 -60 V -80 -100 -1.2 V -1.8 V -0.2 mA -0.3 mA -1.0 mA 25 10 3.0 MHz isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD242/A/B/C NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability.


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