BD242C

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD242/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C ·Complement to Type BD241/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD242 -55 BD242A -70 VCBO Collector-Base Voltage V BD242B -90 BD242C -115 BD242 -45 BD242A -60 VCEO Collector-Emitter Voltage V BD242B -80 BD242C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3.0 A ICM Collector Current-Peak -5.0 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.0 A 40 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case isc website：www.iscsemi.com 3.125 ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BD242/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD242 VCEO(SUS) Collector-Emitter Sustaining Voltage BD242A BD242B IC= -30mA ;IB= 0 BD242C VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.6A VBE(on) Base-Emitter On Vol...