BD244C

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD244C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= -0.3A ·Complement to Type BD243C ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6.0 A ICM Collector Current-Peak -10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2.0 A 65 W -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.92 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD244C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -4V ICES Collector Cutoff Current VCE= -100V; VBE= 0 ICEO Collector Cutoff Current VCE= -60V;IB= 0 MIN MAX UNIT -100 V -1.5 V -2.0 V -0.4 mA -0.7 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Ga...