BD338

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD338 DESCRIPTION ·High DC Current Gain ·Complement to type BD337 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IBM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range -120 V -120 V -6 V -6 A -0.15 A 60 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD338 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 3A; IB= -12mA VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= -3A; VCE= -3V VCB= -120V; IE= 0 VCB= -120V; IE= 0,TC=150℃ VEB= -5V; IC= 0 hFE-1* DC Current Gain IC= -0.5A; VCE= -3V hFE-2* DC Current Gain ...