isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD439
DESCRIPTION ·Collector-Emitter Sustaining Voltage -
: VC...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
BD439
DESCRIPTION ·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= 60V(Min) ·Complement to type BD440 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCES
Collector-Emitter Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Pulse
7
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
36
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
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INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
BD439
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on)-1 Base-Emitter On Voltage
IC= 10mA; VCE= 5V
VBE(on)-2 Base-Emitter On Voltage
IC= 2A; VCE= 1V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
ICEO
Collector Cutoff Current
VCE= 60V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
hFE-2
DC Current Gain
IC= 0.5A; VCE= 1V
hFE-3
DC Current Gain
IC= ...