BD543A

isc Silicon NPN Power Transistors BD543/A/B/C DESCRIPTION ·70 W at 25°C Case Temperature ·Complement to Type BD544/A/B/C ·8 A Continuous Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD543 40 BD543A 60 VCBO Collector-Base Voltage V BD543B 80 BD543C 100 BD543 40 BD543A 60 VCEO Collector-Emitter Voltage V BD543B 80 BD543C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 10 A 70 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.79 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD543 V(BR)CEO Collector-Emitter Breakdown Voltage BD543A BD543B IC= 30mA ; IB= 0 BD543C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A VBE(on) Base-Emitter On Vo...