isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
BD652F
DESCRIPTION ·Collector-Emitter Breakdown Vol...
isc Silicon
PNP Darlington Power
Transistor
INCHANGE Semiconductor
BD652F
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD651F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output
stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICP
Collector Current-Peak
-12
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.15
A
20 W
32
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.6 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 6.3 ℃/W
isc website:www.iscsemi.com
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isc Silicon
PNP Darlington Power
Transistor
INCHANGE Semiconductor
BD652F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
-120
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA
-2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -50mA
-2....