isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD829
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
BD829
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD828 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and
television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.0
A
ICP
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.5
A
2 W
10
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150
℃
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
12.5 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
BD829
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.5A ; VCE= 2V
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0 VCB= 30V; IE= 0; TC= 125℃
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-...