isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD839
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD840 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in television circuits and audio appl...
