INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT63F/A/B/C
DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 10A ·Complement to Type BDT62F/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT63F
60
VCER
Collector-Emi.