BDV64

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A ·Complement to Type BDV65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDV64 -60 VCBO Collector-Base Voltage BDV64A BDV64B -80 -100 BDV64C -120 BDV64 -60 VCEO Collector-Emitter Voltage BDV64A BDV64B -80 -100 BDV64C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -12 ICM Collector Current-Peak -20 IB Base Current-Continuous -0.5 Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @ Ta=25℃ 125 3.5 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ BDV64/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX UNIT 1.0 ℃/W 35.7 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV64 V(BR)CEO Collector-Emitter Breakdown Voltage BDV64A BDV64B IC= -30mA; IB= 0 BDV64C VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA VBE(on) Base-Emitter On Voltag...