BDV65B

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type BDV64/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDV65 60 VCBO Collector-Base Voltage BDV65A 80 V BDV65B 100 BDV65C 120 BDV65 60 VCEO Collector-Emitter Voltage BDV65A 80 V BDV65B 100 BDV65C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 125 W 3.5 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BDV65/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX UNIT 1.0 ℃/W 35.7 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV65 V(BR)CEO Collector-Emitter Breakdown Voltage BDV65A BDV65B IC= 30mA; IB= 0 BDV65C VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA VBE(on) Base-Emitter On Voltage ICEO...