isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-3 Package ·High Current Capability ·Wide area of safe operation ·...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·With TO-3 Package ·High Current Capability ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO VEBO
IC PC TJ
Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature
Tstg
Storage Temperature Range
100
V
100
V
6
V
15
A
180
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W
BDW10
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
BDW10
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=5A; IB= 0.5A
1.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC=5A; IB= 0.5A
1.5
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
100
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
hFE-1
DC Current Gain
IC=1A; VCE= 5V
80
200
hFE-2
DC Current Gain
IC=5A; VCE= 5V
60
hFE-3
DC Current Gain
IC=15A; VCE= 5V
20
ICBO
Collector Cutoff Current
...
