BDW83C

isc Silicon NPN Darlington Power Transistor BDW83C DESCRIPTION ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 3.5 W 150 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W iisc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW83C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 12mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 150mA 4.0 V VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 3V 2.5 V ICEO Collector Cutoff Current ICBO Collector Cutof...