INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
BDW93C
DESCRIPTION ·With TO-220 packaging ·Very hi...
INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
BDW93C
DESCRIPTION ·With TO-220 packaging ·Very high DC current gain ·Monolithic darlington
transistor with integrated
antiparallel collector-emitter diode ·Complement to Type BDW94C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator
regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM IB PC Tj
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation Max.Junction Temperature
100
V
100
V
5
V
12
A
15
A
0.2
A
80
W
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150 ℃ MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.56 ℃/W
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INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
BDW93C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0
VCE(sat)1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 20mA
VCE(sat)2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 100mA
VBE(sat)1 Base-Emitter Saturation Voltage
IC= 5A ,IB= 20mA
VBE(sat)2 Base-Emitter Saturation Voltage
IC= 10A ,IB= 100mA
ICBO
Collec...