BDW93CFP

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDW93CFP DESCRIPTION ·With TO-220F packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to Type BDW94CFP ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous 100 V 100 V 5 V 12 A 15 A 0.2 A PC Collector Power Dissipation Tj Max.Junction Temperature 33 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.8 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDW93CFP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 20mA VCE(sat)2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 100mA VBE(sat)1 Base-Emitter Saturation Voltage IC= 5A ,IB= 20mA VBE(sat...