BDW94A

isc Silicon PNP Power Transistor INCHANGE Semiconductor BDW94/A/B/C DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW94 -45 VCBO Collector-Base Voltage BDW94A -60 V BDW94B -80 BDW94C -100 BDW94 -45 VCEO Collector-Emitter Voltage BDW94A -60 V BDW94B -80 BDW94C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -15 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.2 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case isc website：www.iscsemi.com MAX 1.5 UNIT ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW94 CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BDW94A BDW94B IC= -50mA; IB= 0 BDW94C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -0.1A VBE...