BDX35

isc Silicon NPN Power Transistor BDX35 DESCRIPTION ··High Current Capability-IC= 5A(DC) ·DC Current Gain— : hFE = 45-450(Min) @ IC= 0.5 A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High-current switching in power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBM Base Current-Peak Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC≤ 75℃ Ti Junction Temperature 2 A 1.25 W 15 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDX35 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5 A ;IB= 0.5A 0.9 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A ;IB= 0.7A 1.2 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5 A ;IB= 0.5A 1.7 V VBE(sat)-2 Base-Emitter Saturati...