isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BDX53C
DESCRIPTION ·Collector-Emitter Sustaining Vo...
isc Silicon
NPN Darlington Power
Transistor
INCHANGE Semiconductor
BDX53C
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 100V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage
: VCE(sat) = 2.0 V (Max) @ IC = 3.0 A ·Complement to Type BDX54C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Peak
12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.2
A
65
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.92 ℃/W
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INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
BDX53C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 12mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
ICEO...