BDX75

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W BDX75 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A VBE(on) Base-Emitter On Voltage ICEX Collector Cutoff Current ICEO Collector Cutoff Current IC= 8A ; VCE= 4V VCE= 45V; VBE= -1.5V VCE= 45V; VBE= -1.5V;TC=150℃ VCE= 40V; IB= 0 IEBO Emitter Cutoff Current VEB= 8V; IC= 0 hFE-1 DC Current Gain IC= 8A ; VCE= 4V hFE-2 DC Current Gain IC= 16A ; VCE= 4V fT Current-Gain...