BDY29

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 75V (Min) ·Low Collector-Emitter Saturation Voltage ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power ,high current and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 75 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7.5 A 220 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.8 ℃/W BDY29 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A VBE(on) Base-Emitter On Voltage ICEX Collector Cutoff Current ICEO Collector Cutoff Current IC= 30A ; VCE= 4V VCE= 100V; VBE= -1.5V VCE= 100V; VBE= -1.5V;TC=150℃ VCE= 75V; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 15A ; VCE= 2V Is/b Second Breakdown Collector Current with Base Forward Bias...