isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V (Min) ·Wide area of ...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V (Min) ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO VEBO
IC PC TJ
Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature
Tstg
Storage Temperature Range
50
V
40
V
6
V
6
A
115
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W
BDY38
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isc Silicon
NPN Power
Transistor
BDY38
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC=5A; IB= 0.5A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC=5A; IB= 0.5A
1.5
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
40
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
hFE-1
DC Current Gain
IC=1A; VCE= 5V
80
200
hFE-2
DC Current Gain
IC=5A; VCE= 5V
30
ICBO
Collector Cutoff Current
VCB=50V ; IE= 0
100 uA
IEBO
Emitter Cutoff Current
VEB=6V; IC= 0
100 uA
fT
Current-Gain—Bandwidth Pr...
