BDY48

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, Inverters , deflection circuits , switching regulators, and high voltage bridge amplifiers.. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 200 V 200 V 6 V 3.5 A 100 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.75 ℃/W BDY48 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY48 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC=3A; IB= 0.3A 1.5 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V hFE-1 DC Current Gain IC=1A; VCE= 5V 80 200 hFE-2 DC Current Gain IC=3A; VCE= 5V 30 ICBO Collector Cutoff Current VCB=200V ; IE= 0 100 uA...