BDY49

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Excellent Safe Operating Area ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 100 V 6 V 30 A IB Base Current-Continuous PC Collector Power Dissipation TJ Junction Temperature 8 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ HERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W BDY49 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY49 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A; IB= 1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A 1.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC=10A; IB= 1A 1.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 2A 2.5 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V hFE-1 DC Current Gain IC=1...