BDY60

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Low Collector-Emitter Saturation Voltage ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ BDY60 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 5V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 2V hFE-2 DC Current Gain IC= 4A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V BDY60 MIN TYP. MAX UNIT 60 V 5 V 2.0 V 1.5 V 100 μA 100 μA 40 300 20 30 MHz NOT...