BF470

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification BF470/BF472 DESCRIPTION ·PNP transistors in a to-126 package ·NPN complements BF469 and BF471 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended for class-B video output stages in television Receivers and for high-voltage IF output stages ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BF469 -250 VCBO Collector-Base Voltage V BF471 -300 BF469 -250 VCEO Collector-Emitter Voltage V BF471 -300 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -50 mA ICM Collector Current-Peak -100 mA IBM Base Current-Peak Ptot Total power dissipation Tmp≤114℃ TJ Junction Temperature -50 mA 1.8 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance, Junction to ambient 100 K/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BF470/BF472 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -30mA; IB= 5mA IEBO Emitter Cutoff Current IcBO Collector cut-off current hFE DC Current Gain VEB= -5V; IC=0 VcB= -200V; IE=0 VcB= -200V; IE=0,Tj=150℃ IC= 25mA ; VCE= 20V MIN TYP. MAX UNIT -0.6 V -50 nA -10 nA -10 uA 50 NOTICE： ISC reserves the rights ...