INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BF470/BF472
DESCRIPTION ·PNP transis...
INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
isc Product Specification
BF470/BF472
DESCRIPTION ·
PNP transistors in a to-126 package ·
NPN complements BF469 and BF471 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Intended for class-B video output stages in television
Receivers and for high-voltage IF output stages
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BF469
-250
VCBO
Collector-Base Voltage
V
BF471
-300
BF469
-250
VCEO
Collector-Emitter Voltage
V
BF471
-300
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-50
mA
ICM
Collector Current-Peak
-100
mA
IBM
Base Current-Peak
Ptot
Total power dissipation Tmp≤114℃
TJ
Junction Temperature
-50
mA
1.8
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance, Junction to ambient 100 K/W
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INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
BF470/BF472
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -30mA; IB= 5mA
IEBO
Emitter Cutoff Current
IcBO
Collector cut-off current
hFE
DC Current Gain
VEB= -5V; IC=0 VcB= -200V; IE=0 VcB= -200V; IE=0,Tj=150℃ IC= 25mA ; VCE= 20V
MIN TYP. MAX UNIT -0.6 V
-50 nA -10 nA -10 uA 50
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