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BF775 Dataheets PDF



Part Number BF775
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BF775 DatasheetBF775 Datasheet (PDF)

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 13dB TYP. @VCE= 8 V,IC = 10mA,f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in TV-sat and UHF tuners. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage 20.

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isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 13dB TYP. @VCE= 8 V,IC = 10mA,f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in TV-sat and UHF tuners. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage 20 V 20 V 15 V VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2.5 V 30 mA 4 mA 0.28 W 150 ℃ -65~150 ℃ BF775 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BF775 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V ICES Collector Cutoff Current VCE= 20V; VBE= 0 10 μA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2.5V; IC= 0 0.1 μA hFE DC Current Gain IC= 10mA ; VCE= 8V 40 200 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 8V; f= 500MHz 3.5 5 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.38 0.6 pF PG Power Gain IC= 10mA ; VCE= 8V; f= 900MHz 16 dB PG Power Gain IC= 10mA ; VCE= 8V; f= 1.8GHz 10.5 dB ︱S21e︱2 Insertion Power Gain IC= 10mA ; VCE= 8V; f= 900MHz 13 dB ︱S21e︱2 Insertion Power Gain IC= 10mA ; VCE= 8V; f= 1.8GHz 7.5 dB NF Noise Figure IC= 2mA ; VCE= 6V; f= 900MHz 1.8 dB NF Noise Figure IC= 2mA ; VCE= 6V; f= 1.8GHz 2.9 dB isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BF775 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 3 isc & iscsemi is registered trademark .


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