isc Silicon NPN RF Transistor
DESCRIPTION ·Low Noise Figure
NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High ...
isc Silicon
NPN RF
Transistor
DESCRIPTION ·Low Noise Figure
NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain
︱S21e︱2 = 13.5 dB TYP. @VCE= 8 V,IC = 30 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and
linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCES Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
20
V
20
V
12
V
2
V
80
mA
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
10
mA
0.6
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
BFG193
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN RF
Transistor
BFG193
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
12
V
ICES
Collector Cutoff Current
VCE= 20V; VBE= 0
100 μA
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
1
μA
hFE
DC Current Gain
IC= 30mA ; VCE= 8V
50
200
fT
Current-Gain—Bandwidth Product
IC= 50mA ; VCE= 8V; f= 500MHz
6
8
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.6 0.9 pF
PG
Power Gain
IC= 30mA ; VCE= 8V; f= 900MHz
15.5
dB...
