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BFR93AW Dataheets PDF



Part Number BFR93AW
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BFR93AW DatasheetBFR93AW Datasheet (PDF)

isc Silicon NPN RF Transistor DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB B.

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isc Silicon NPN RF Transistor DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 20 V 20 V 12 V 2 V 50 mA 6 mA 0.3 W 150 ℃ -65~150 ℃ BFR93AW isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFR93AW ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 ICES Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain VCE= 20V; VBE= 0 VCB= 10V; IE= 0 VEB= 2V; IC= 0 IC= 30mA ; VCE= 8V fT Current-Gain—Bandwidth Product IC= 30mA ; VCE= 8V; f= 500MHz COB Output Capacitance NF Noise Figure NF Noise Figure PG Power Gain PG Power Gain ︱S21e︱2 Insertion Power Gain ︱S21e︱2 Insertion Power Gain IE= 0 ; VCB= 10V; f= 1MHz IC= 5mA ; VCE= 8V; f= 900MHz IC= 5mA ; VCE= 8V; f= 1.8GHz IC= 30mA ; VCE= 8V; f= 900MHz IC= 30mA ; VCE= 8V; f= 1.8GHz IC= 30mA ; VCE= 8V; f= 900MHz IC= 30mA ; VCE= 8V; f= 1.8GHz 12 V 100 μA 100 nA 10 μA 50 200 4.5 6 GHz 0.62 0.9 pF 2 dB 3.3 dB 15 dB 10 dB 13 dB 7.5 dB NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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