isc Silicon NPN RF Transistor
DESCRIPTION ·Low Noise Figure
NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz ·High ...
isc Silicon
NPN RF
Transistor
DESCRIPTION ·Low Noise Figure
NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz ·High Gain
︱S21e︱2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and
linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage VCES Collector-Emitter Voltage
20
V
20
V
VCEO Collector-Emitter Voltage
15
V
VEBO Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
100
mA
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
12
mA
0.5
W
175
℃
Tstg
Storage Temperature Range
-65~150
℃
BFR106
isc website：www.iscsemi.com
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isc Silicon
NPN RF
Transistor
BFR106
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
15
V
ICES
Collector Cutoff Current
VCE= 20V; VBE= 0
100 μA
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 2V; IC= 0
10 μA
hFE
DC Current Gain
IC= 70mA ; VCE= 8V
40
220
fT
Current-Gain—Bandwidth Product
IC= 70mA ; VCE= 8V; f= 500MHz 3.5
5
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.95 1.5 pF
PG
Power Gain
IC= 70mA ; VCE= 8V; f= 900MHz
12.5
...
