BFR520

isc Silicon NPN RF Transistor DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 70 mA 0.3 W 175 ℃ Tstg Storage Temperature Range -65~150 ℃ BFR520 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFR520 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 6V; IE= 0 0.05 μA hFE DC Current Gain IC= 20mA ; VCE= 6V 60 250 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 6V; f= 1GHz 9 GHz COB Output Capacitance IE= 0 ; VCB= 6V; f= 1MHz 0.5 pF PG Power Gain IC= 20mA ; VCE= 6V; f= 900MHz 15 dB PG Power Gain IC= 20mA ; VCE= 6V; f= 2GHz 9 dB ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 6V; f= 900MHz 13 14 dB NF Noise Figure IC= 5mA ; VCE= 6V; f= 900MHz 1.1 1.6 dB NF Noise Figure IC= 20mA ; VCE= 6V; f= 900MHz 1.6 2.1 dB NOTICE： ISC reserves the rights to make chan...