BFS520

isc Silicon NPN RF Transistor INCHANGE Semiconductor BFS520 DESCRIPTION ·Low Noise and High Gain NF = 1.5 dB TYP @VCE = 6V, IC = 5 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.1 A 150 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor BFS520 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 6V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 6V Cre Feed-Back Capacitance IE= 0 ; VCB= 6V;f= 1.0MHz ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 6V;f= 1.0GHz NF Noise Figure IC= 5mA ; VCE= 6V;f= 1.0GHz MIN TYP. MAX UNIT 0.1 μA 0.1 μA 90 250 8 GHz 0.4 0.7 pF 12.5 dB 1.5 2 dB  hFE Classification Marking B C D hFE 90-130 120-180 170-250 NOTICE： ISC reserves the rights to make ch...