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BU104D Dataheets PDF



Part Number BU104D
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BU104D DatasheetBU104D Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEX VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage .

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEX VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage VBE= -5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Repetitive Base Current-Continuous Collector Power Dissipation @ TC= 25℃ Junction Temperature 400 V 400 V 150 V 6 V 7 A 15 A 3 A 85 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU104D isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1A ICBO Collector Cutoff Current VCB= 250V; IE= 0 ICEX Collector Cutoff Current VCE= 400V; VBE= -5V IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 5A; VCE= 1.75V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V BU104D MIN TYP. MAX UNIT 150 V 2.5 V 2.5 V 0.5 mA 1.0 mA 400 mA 7 50 10 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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