BU114

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150 V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of TVs and CRTs applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 150 V 6 V 6 A ICM Collector Current-Peak 10 A IB Base Current 4 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction Temperature Tstg Storage Temperature 150 ℃ -65~150 ℃ BU114 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Base Cutoff Current VCB=250V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 5A ; VCE= 5V fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V toff Turn-Off Time IC= 5A; IB= 0.5A BU114 MIN MAX UNIT 150 V 1.0 V 1.2 V 1.0 mA 1.0 mA 5 10 MHz 1.0 μs NOTICE： ...