isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VC...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120 V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output stage of TVs and
CRTs applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO VEBO
IC
Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous
120
V
8
V
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current
2
A
PC
Collector Power Dissipation@TC=25℃
67
W
TJ
Junction Temperature
Tstg
Storage Temperature
150
℃
-65~150 ℃
BU123
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Base Cutoff Current
VCB=180V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
fT
Current Gain-Bandwidth Product
IC= 0.5A ; VCE= 10V
BU123
MIN MAX UNIT
120
V
1.0
V
1.2
V
1.0 mA
1.0 mA
25 250
5
10
MHz
NOTI...