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BU128
NPN Transistor
Description
isc Silicon
NPN
Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifie...
INCHANGE
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