isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 750V (Min) ·High Curre...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 750V (Min) ·High Current Capability ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV horizontal output and high power switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
750
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
15
A
85
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
BU212
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
BU212
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
350
V
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
750
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
8
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 2.5A
2.2
V
ICBO
Collector Cutoff Current
VCB= 750V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
0.1 mA
hFE
DC Current Gain
IC= 8A; VCE= 5V
5
fT
Current-Gain—Bandwidth Product IC= 0.5A; V...
