isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 350V(Min.) ...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 350V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Automotive ignition ·Switching
regulator ·Motor control applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current- Continuous
10
A
ICM
Collector Current-Peak
16
A
IB
Base Current
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
3
A
125
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0 ℃/W
BU323P
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6 A; IB= 120mA
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB= 300mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 6 A; IB= 120mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 10 A; IB= 300mA
VBE(on) Base-Emitter On Volt...