BU323Z

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BU323Z DESCRIPTION ·With TO-220 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current- Continuous 3 A PC Collector Power Dissipation 150 W Tj Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BU323Z THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.0 62.5 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=7A, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= 7A ,IB= 70mA VCE(sat)2 Collector-Emitter Saturation Voltage IC= 8A ,IB= 0.1A VCE(sat)3 Collector-Emitter Saturation Voltage IC= 10A ,IB= 0.25A VBE(sat)1 Base-Emitter Saturation Vol...