INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
BU323Z
DESCRIPTION ·With TO-220 packaging ·Very hi...
INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
BU323Z
DESCRIPTION ·With TO-220 packaging ·Very high DC current gain ·Monolithic darlington
transistor with integrated
antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator
regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current- Continuous
3
A
PC
Collector Power Dissipation
150
W
Tj
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
BU323Z
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX 1.0 62.5
UNIT ℃/W ℃/W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=7A, IB= 0
VCE(sat)1 Collector-Emitter Saturation Voltage IC= 7A ,IB= 70mA
VCE(sat)2 Collector-Emitter Saturation Voltage IC= 8A ,IB= 0.1A
VCE(sat)3 Collector-Emitter Saturation Voltage IC= 10A ,IB= 0.25A
VBE(sat)1 Base-Emitter Saturation Vol...