INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BF457/458/459
DESCRIPTION ·Collector...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
BF457/458/459
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO(BR) = 160V(Min)- BF457 250V(Min)- BF458 300V(Min)- BF459
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Intended for video output stages in colour and black And white TV receivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BF457
160
V
VCBO
Collector-Base Voltage BF458
250
BF459
300
BF457
160
V
VCEO
Collector-Emitter Voltage BF458
250
BF459
300
VEBO
Emitter-Base Voltage
5
V
ICM
Collector Current-Peak
300
mA
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
50
mA
1.25
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
isc website:www.iscsemi.com
MAX UNIT 10 ℃/W
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
BF457/458/459
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)EBO
Collector-Base Breakdown Voltage
BF457 BF458 BF459
BF457
ICBO
Collector Cutoff Current BF458
BF459
VCE(sat) Collector-Emitter Saturation Voltage
hFE
DC Current Gain
Cre
Reverse Capacitance
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
CO...