BF458

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BF457/458/459 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO(BR) = 160V(Min)- BF457 250V(Min)- BF458 300V(Min)- BF459 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended for video output stages in colour and black And white TV receivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BF457 160 V VCBO Collector-Base Voltage BF458 250 BF459 300 BF457 160 V VCEO Collector-Emitter Voltage BF458 250 BF459 300 VEBO Emitter-Base Voltage 5 V ICM Collector Current-Peak 300 mA IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 mA 1.25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case isc website：www.iscsemi.com MAX UNIT 10 ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BF457/458/459 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)EBO Collector-Base Breakdown Voltage BF457 BF458 BF459 BF457 ICBO Collector Cutoff Current BF458 BF459 VCE(sat) Collector-Emitter Saturation Voltage hFE DC Current Gain Cre Reverse Capacitance COB Output Capacitance fT Current-Gain—Bandwidth Product CO...