BU606D

isc Silicon NPN Power Transistor DESCRIPTION ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak Repetitive 10 A ICP Collector Current- Peak (10ms) 15 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 90 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU606D isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU606D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 200 V VEBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 6.0 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.65A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 5A; IB= 0.65A VCE= 400V; VBE= 0 VCE=250V; VBE= 0 VCE=250V; VBE= 0;TC= 150℃ VEB= 6V; IC= 0 1.2 V 5.0 0.1 mA...